Introductory Circuit Analysis by Robert L. Boylestad in DOC, RTF, TXT download e-book. No eBook available. Boylestad, Louis Nashelsky Snippet view - 1999. Electronic Devices and Circuit Theory Robert L. Boylestad, Louis Nashelsky Snippet.

Electronic devices-and-circuit-theory-10th-ed-boylestad-chapter-1 • 1. Chapter 1: Semiconductor Diodes • Diodes The diode is a 2-terminal device.

A diode ideally conducts in only one direction. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky 2 • Diode Characteristics Conduction Region Non-Conduction Region Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved.

• The voltage across the diode is 0 V • The current is infinite • The forward resistance is defined as RF = VF / IF • The diode acts like a short Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky • All of the voltage is across the diode • The current is 0 A • The reverse resistance is defined as RR = VR / IR • The diode acts like open 3 • Semiconductor Materials Materials commonly used in the development of semiconductor devices: • Silicon (Si) • Germanium (Ge) • Gallium Arsenide (GaAs) Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky 4 • Doping The electrical characteristics of silicon and germanium are improved by adding materials in a process called doping. There are just two types of doped semiconductor materials: n-type p-type • n-type materials contain an excess of conduction band electrons. • p-type materials contain an excess of valence band holes.

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Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky 5 • p-n Junctions One end of a silicon or germanium crystal can be doped as a p-type material and the other end as an n-type material. The result is a p-n junction. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky 6 • p-n Junctions At the p-n junction, the excess conduction-band electrons on the n-type side are attracted to the valence-band holes on the p-type side.

The electrons in the n-type material migrate across the junction to the p-type material Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. (electron flow). The electron migration results in a negative charge on the p-type side of the junction and a positive charge on the n-type side of the junction. Electronic Devices and Circuit Theory, 10/e Robert L.